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| to-220f plastic-encapsulate transistors 3DD3853 transistor (npn) features z high current gain z saturation voltage low z power dissipation p cw : 2 w (t a =25 . ) 25 w (t c =25 . ) maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 7 v i c collector current -continuous 3 a t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp m ax u nit collector-base breakdown voltage v (br)cbo i c =1ma, i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c =10ma, i b =0 60 v emitter-base breakdown voltage v (br)ebo i e =100a, i c =0 7 v collector cut-off current i cbo v cb =60v, i e =0 100 a emitter cut-off current i ebo v eb =7v, i c =0 100 a dc current gain h fe * v ce =5v, i c =500ma 60 300 collector-emitter saturation voltage v ce(sat) * i c =3a, i b =300ma 1.0 v transition frequency f t v ce =5v, i c =500ma 5 mhz *pulse test: t p 300s, ? 0.02. classification of h fe rank o y gr range 60-120 100-200 150-300 to-220f 1. base 2. collector 3. emitte 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,jun,2011
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